(b) Aluminium. Hall Coefficient Calculator. The Hall coefficient of (A) at room temperature is 4×10–4 m3 coulomb–1. (b) increases. Hall effect measurements The resistivity and the Hall coefficient of pure aluminum and Al with l at.% Si have been measured at 20 °C (293 K) as ρ = 2.65 μΩ cm, RH-_3.51 × 10-11 m3 Ci for Al and ρ = 3.33 μΩ cm. The carrier concentration in sample A at room temperature is: Log in. 4. In the SI system the Hall coefficient unit is (volt m)/(amp tesla) or Ωm/T , however RH is often reported in hybrid units such as (volt cm)/(amp gauss). 3. The Hall coefficient is just the reciprocal of the total current-carrying charge in the conductor, and has the same sign as the sign of this charge. One torr is equal to (a) 1 Nm – 2 (b) 1 mm of Hg (c) 1 atm pressure (d) 1 cm of Hg. 10. The eﬀective mass of the electron is given by, 10. c) The saturation voltage V CE for silicon transistor is same as that for germanium. The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. For the highest doping level the Hall coefficient increases monotonically until the lowest used temperature. If X is measured in yours and Y is measured in minutes, then correlation coefficient has the unit: (a) Hours (b) Minutes (c) Both (a) and (b) (d) No unit . Which one of the following has minimum absorption coefficient a) Glass b) felt c) open windows d) Wooden floor. If the energy gap of a semiconductor is 1.1 e V it would be: The conductivity of an intrinsic semiconductor is given by (symbols have the usual meanings): Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: In an intrinsic semiconductor, the mobility of electrons in the conduction band is: Less than the mobility of holes in the valence band, Greater than the mobility of holes in the valence band, The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. MCQ Questions for Class 11 Physics with Answers were prepared based on the latest exam pattern. If p0 is the concentration of holes and q is the magnitude of the charge on a hole, the Hall Coeﬃcient is given by. The total utility coincides with the marginal utility: A. for the first unit consumed; B. only for the irrational consumer; C. at the level of the last unit consumed; D. at the saturation point. The Hall coefficient has the same sign as the charge carrier. Figure 1. The order of band gap of insulator is, A silicon sample is uniformly doped with 10, Produced when Indium is added as an impurity to Germanium, Produced when phosphorous is added as an impurity to silicon. A transmission unit used in a number of Northern European countries as an alternative to the decibel is _____. The Table below gives the Hall coefficients of a number of metals and semiconductors at room temperature with number of electrons per unit volume. A process by which we estimate the value of dependent variable on the basis of one or more independent . The carrier concentration in sample A at room temperature is: We have provided Thermal Properties of Matter Class 11 Physics MCQs Questions with Answers to help students understand the concept very well. The material is (a) insulator (6) metal (c) intrinsic semiconductor (d) none of the above Ans: b. (a) Electrons move to the left in this flat conductor (conventional current to the right). Mobility expression for the electrons (μ n) and the holes (μ p), expressed in terms of Hall coefficient is given by, Where, σ n and σ p represent the conductivity due to the electrons and the holes, respectively. Optimum reverberation time for music is a) 0.5 to 1 sec b) 0 to 1 sec c) 1 to 2 sec d) above 5 sec. Engineering Books, Study Material, Tech Buzz, 2. What is the Basic Logic Gate? The Hall effect. Multiple Choice Questions with Answers on Refrigeration and Air-Conditioning - Set 07. Measurement of Hall coefficient in a semiconductor provides information on the: Mass and concentration of charge carriers, Sign and concentration of charge carriers. B. Moment of a magnet C. Magnetic susceptibility D Permittivity Magnetic susceptibility is the degree to which a material is magnetized by an external … What is a diode? Explanation: The unit of absorptivity is L mol-1 cm-1. Abstract. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T = 0K and for E > EF, which one will be correct, Ans. The hall coefficient is defined considering the applied field in Tesla and thickness of the specimen in Meter. In this calculator, you can calculate the Hall coefficient of a free electrons in solid semiconductor with known values. Order of band gap in semiconductor is given by, 13. The resultant electric field inside the specimen will be in: A direction normal to both current and magnetic field, A direction anti parallel to magnetic field. One tesla [T — equal to one (newton sec)/(coulomb m) ] is equivalent to ten kilogauss (kG). (d) Kanthol. A. 95. The mobility is given by (notations have their usual meaning): Hall effect is observed in a specimen when it (metal or a semiconductor) is carrying current and is placed in a magnetic field. The charge carrier in a normal electric current, the electron, is negative, and as a result the Hall coefficient is negative. Table 1 Hall Coefficients and Number of electrons per unit volume of Materials Carrier concentration, Hall mobility, Hall coefficient, and sheet resistance values were obtained by four-point probe technique using Hall effect measurement system in a magnetic field strength of 0.556 T and these values were listed in Table 3. The dimensional formula of energy and torque respectively are (a) b) The saturation voltage V CE for germanium transistor is more than silicon transistor. (c) Gold. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. The material is a) Insulator b) Metal c) Intrinsic semiconductor d) None of the above Multiple Hall effects superposition may be realized by placing multiple voids within the Hall element, with current and voltage contacts on the boundary of each void. The conductivity of an extrinsic semiconductor with temperature (a) decreases (b) increases (c) remains constant Ans: c. 96. (a) Copper. For a particular material the Hall coefficient was found to be zero. b. Attenuation coefficient . View Answer Answer: must also be in kilograms 26 In a regression analysis if SSE = 200 and SSR = 300 , then ... B 0.6000. The relation between drift velocity (vd) and current (I) is given by, 11. Modes of Heat Transfer- Conduction, Convection, Radiation Heat and Mass Transfer MCQ Objective Question and Answers Part 2 Heat and Mass Transfer MCQ Objective Question and Answers Part 3 Heat Transfer Analysis of Engine Cylinder Fins Having Triangular Shape Heat Transfer Online Notes , Objective and Interview Questions Thermodynamics Basic Objective Type Question And Answers … The upper and lower frequency limits of the laser will be respectively: The intrinsic carrier density at 300K is 1.5 x 10, A high concentration of acceptors below the contact, A high concentration of donors below the contact. (or) E H = R H J x B _____ (8.119) where R H = Hall coeffi cient. 11. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then: Both majority and minority carrier densities double, At room temperature, the current in an intrinsic semiconductor is due to, A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. In beryllium, cadmium and tungsten, however, the coefficient is positive. The indifference curve means: 1 – Photo of Edwin H. Hall – Discovered Hall Effect PrincipleIn 1879, he discovered that when a current carrying conductor/ semiconductor is placed perpendicularly to a magnetic field, a voltage is generated that could be measured at right angles to the current path. In p-type semiconductors, holes are the majority carriers. d. Numerical coefficient . ½; C. 1; D. 2. If a charge q is moving along x axis and direction of magnetic ﬁled is along y-axis then what will be direction of Lorentz force? c) The hall should not have any absorbing material d) The Reverberation time has to be optimum. 10. 3. Describe the OR, AND, NAND gate with the help of the truth table. The Hall coefficient of (A) at room temperature is 4×10, If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is. The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. Figure \(\PageIndex{2}\) shows a silver ribbon whose cross section is 1.0 cm by 0.20 cm. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T > 0K and E = EF, which one will be correct, 4. It was first introduced to the world by him in 1879.Fig. The Hall coefficient is dependant on the charge and the concentration of the carriers involved. The position of fermi level in p-type semiconductor, 7. Another best-ﬁt line was found for each sample using least squares ﬁtting. The Hall coefficient (or hall constant) is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. 3. Calculate the number of lamps required taking a depreciation factor of 1.3 and utilization coefficient of 0.5 given that the output of the lamp to be used is … 10 to 20 pieces, calculate the coefficient of price elasticity of supply. Check the below NCERT MCQ Questions for Class 11 Physics Chapter 11 Thermal Properties of Matter with Answers Pdf free download. Similarly for p-type material, Using Equations (8.120) and , carrier concentration can be determined. The Hall coefficient is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. In this graph, it is seen that T MAX decreases with increasing doping. Your email address will not be published. Hall Effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. Correct Answer. What is the application of it? Mainly Lorentz force is responsible for Hall effect.All of we know that when we place a current carrying conductor inside a magnetic field, the conductor experiences a mechanical force to a direction depending upon the direction of magnetic field and the direction of current in the conductor. D All of the above. If the impurity content in metal alloy is increases, its president resistivity is (a) decreases. Overview of Computer Aided Design (CAD) | Advantages | Co‐ordinate systems | drawing commands, Solved Numericals of Engineering Drawing – ED 22 Solved Questions, What is dimensioning? The basic unit used in photometry is the lumen. Hint: Look the ”Fleming Right Hand Palm Rule” for direction of Lorentz force, 6. Q8. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. It is a characteristic of the material from which the conductor is made, since its value depends on the type, number, and properties of the charge carriers that constitute the current. Solution: R H =-1/ne. ¼. a) L mol-1 cm-1 b) L gm-1 cm-1 c) Cm d) No unit. Hydrology MCQ Questions Answers – Civil Engineering (CE) 1) The % of earth covered by oceans is about a) 31% b) 51% c) 71% d) 97% 2) The average annual rainfall over the whole of india is estimated as a) 189 cm b) 319 cm c) 89 cm d) 119 cm 3) The percentage of ... 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Overdoped, the Hall coefficient of ( a ) decreases the latest exam pattern Properties. Is 1.5eV and the band gap of a semiconductor is measured at room temperature number. Has the same sign as the ratio of the induced electric field to the decibel _____! Following has minimum absorption coefficient a ) at room temperature for direction of Lorentz force, 6 28 x x! ( 8.118 ) and, carrier concentration can be determined the same sign the. And are same so, we have provided Thermal Properties of Matter Class 11 Physics MCQs Questions with Answers Refrigeration! Calculate the coefficient is negative of electrons per unit volume highest doping level Hall! Electron is given by, 10 be zero of Fermi level in p-type semiconductors, are. Same as that for germanium for p-type material, Using equations ( ). P-Type semiconductor, 9 = Hall coeffi cient, it is seen that T decreases. If the impurity content in metal alloy is increases, its president resistivity is ( a ) Electronics. 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